Nitride Electronics: The Power of Polarization
Video Lecture by Tomás Palacios
Department of Electrical Engineering and Computer Science
and Microsystems Technology Laboratories
Massachusetts Institute of Technology
In the short span of 15 years, nitride-based semiconductors have revolutionized electronics and optoelectronics. These materials have a unique set of properties that makes them the most complete semiconductor family. Their tunable direct bandgap, very high electron velocity, polarization, piezoelectricity, chemical and thermal stability, ferromagnetism and biocompatibility allow applications spanning from light emitting diodes (LEDs) and laser to surface acoustic wave filters, photodetectors, advanced physical and bio- sensors and transistors.
In this seminar, we will study some of the amazing properties of these semiconductors and review how to apply them to the design and fabrication of advanced transistors. We will also describe some of exciting new applications of these devices in fields as diverse as wireless communications, radar, biosensors, energy and power conversion, and even high speed digital electronics for a beyond-Si scenario.
Bio sketch
Tomas Palacios leads the Wide-bandgap Semiconductor Materials and Devices Group at the Massachusetts Institute of Technology where he develops new electronic devices to advance the fields of information technology, biosensors and energy conversion. He got his PhD from the University of California – Santa Barbara in 2006, where he helped to set the state-of-the-art in high-frequency high-power nitride transistors. Between 1998 and 2002, while in Spain, he developed ultraviolet detectors and surface acoustic wave devices for sensor and mobile telephony applications. He has also worked at the European Organization for Nuclear Research (CERN), where he contributed to the design of solid-state particle detectors. Dr. Palacios’ work has been recognized with several awards such as the 2008 DARPA Young Faculty Award, the 2006 UCSB Lancaster Award, the Young Researcher Award at the 6th International Conferenc
April 7, 2008 at 18:00
Samuel Neaman Institute
